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  tsm3457 30v p - channel mosfet 1 / 6 version: c 07 sot - 26 features advance trench process technology high density cell design for ultra low on - resistance application load switch pa switch ordering information part no. package packing tsm3457cx6 rf sot - 26 3kpcs / 7 reel absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds - 30 v gate - source voltage v gs 20 v continuous drain current i d - 5 a pulsed drain current i dm - 20 a continuous source current (diode cond uction) a,b i s - 1.7 a ta = 25 o c 2.0 maximum power dissipation ta = 70 o c p d 1.3 w operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter symbol limit unit jun ction to case thermal resistance r? jc 30 o c/w junction to ambient thermal resistance (pcb mounted) r? ja 80 o c/w note s : a. pulse width limited by the maximum junction temperature b. surface mounted on fr4 board, t 5 sec. pr oduct summary v ds (v) r ds(on) (m) i d (a) 60 @ v gs = 10v - 5 - 30 100 @ v gs = 4.5v - 3.7 block diagram p - channel mosfet pin definition : 1. drain 6. drain 2. drain 5, drain 3. gate 4. source
tsm3457 30v p - channel mosfet 2 / 6 version: c 07 electrical specifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = - 250ua bv dss - 30 -- -- v gate threshold voltage v ds = v gs , i d = - 250a v gs(th) - 1.0 - 1.5 - 3.0 v gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = - 24 v, v gs = 0v i dss -- -- - 1.0 a on - state drain current a v ds = - 5v, v gs = - 10v i d(on) - 20 -- -- a v gs = - 4.5v, i d = - 3.7 a -- 82 100 drain - source on - state resistance a v gs = - 10v, i d = - 5a r ds(on) -- 50 60 m forward transconductance a v ds = - 1 5v, i d = - 5a g fs -- 10 -- s diode forward voltage i s = - 1.7a, v gs = 0v v sd -- - 0.8 - 1.2 v dynamic b total gate charge q g -- 9.52 gate - source charge q gs -- 3.43 -- gate - drain charge v ds = - 15v, i d = - 3 .7 a, v gs = - 10v q gd -- 1.71 -- nc input capacitance c iss -- 551.57 -- output capacitance c oss -- 90.96 -- reverse transfer capacitance v ds = - 15v, v gs = 0v, f = 1.0mhz c rss -- 60.79 -- pf switching c turn - on delay time t d(on) -- 10.8 -- turn - on rise time t r -- 2.33 -- turn - off delay time t d(off) -- 22.53 -- turn - off fall time v dd = - 15v, r l = 15 , i d = - 1a, v gen = - 10v, r g = 6 t f -- 3.87 -- ns notes: a. pulse test: pw 300 s, d u ty cycle 2% b. for design aid only, not subj ect to production testing. b. switching time is essentially independent of operating temperature.
tsm3457 30v p - channel mosfet 3 / 6 version: c 07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) output characteristics transfer characteristics on - resistanc e vs. drain current gate charge on - resistance vs. junction temperature source - drain diode forward voltage
tsm3457 30v p - channel mosfet 4 / 6 version: c 07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) on - resistance vs. gate - source voltage threshold voltage single p ulse power normalized thermal transient impedance, junction - to - ambient
tsm3457 30v p - channel mosfet 5 / 6 version: c 07 sot - 26 mechanical drawing marking diagram 57 = device code y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j = oct, k =nov, l =dec) l = lot code sot - 26 dimension millimeters inches dim min typ max min typ max a 0.95 bsc 0.0374 bsc a1 1.9 bsc 0.0748 bsc b 2.60 2.8 0 3.00 0.1024 0.1102 0.1181 c 1.40 1.50 1.70 0.0551 0.0591 0.0669 d 2.80 2.90 3.10 0.1101 0.1142 0.1220 e 1.00 1.10 1.20 0.0394 0.0433 0.0472 f 0.00 -- 0.10 0.00 0.0039 g 0.35 0.40 0.50 0.0138 0.0157 0.0197 h 0.10 0.15 0.20 0.0039 0.0059 0.0079 i 0 .30 -- 0.60 0.0118 -- 0.0236 j 5 -- 10 5 -- 10
tsm3457 30v p - channel mosfet 6 / 6 version: c 07 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc? terms and conditions of sale for suc h products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.


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